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| Si4862DY New Product Vishay Siliconix N-Channel 16-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) 0.0033 @ VGS = 4.5 V 0.0055 @ VGS = 2.5 V ID (A) 25 20 D D D D TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.3-mW rDS(on) Low Gate Resistance 100% RG Tested APPLICATIONS D Synchronous Rectification D Low Output Voltage Synchronous Rectification D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 16 "8 25 Steady State Unit V 17 13 60 A 1.3 1.6 1 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 20 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71439 S-03662--Rev. B, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 Si4862DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 12.8 V, VGS = 0 V VDS = 12.8 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 25 A VGS = 2.5 V, ID = 20 A VDS = 6 V, ID = 25 A IS = 2.9 A, VGS = 0 V 30 0.0027 0.0045 140 0.75 1.1 0.0033 0.0055 S V 0.6 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 VDS = 6 V, VGS = 4.5 V, ID = 25 A 48 11.8 8.9 1.3 42 38 120 50 80 2.2 60 60 180 75 120 ns W 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 5 thru 2.5 V 50 50 60 Transfer Characteristics I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 TC = 125_C 20 25_C - 55_C 20 2V 10 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71439 S-03662--Rev. B, 14-Apr-03 Si4862DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 10000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.008 C - Capacitance (pF) 8000 Ciss 6000 0.006 VGS = 2.5 V 0.004 VGS = 4.5 V 0.002 4000 Coss 2000 Crss 0.000 0 10 20 30 40 50 60 0 0 3 6 9 12 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 25 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 25 A 3 r DS(on) - On-Resistance (W) (Normalized) 24 36 48 60 4 1.4 1.2 2 1.0 1 0.8 0 0 12 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.015 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C I S - Source Current (A) r DS(on) - On-Resistance ( W ) 0.012 10 TJ = 25_C 0.009 0.006 ID = 25 A 0.003 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Document Number: 71439 S-03662--Rev. B, 14-Apr-03 www.vishay.com 3 Si4862DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 60 50 ID = 250 mA V GS(th) Variance (V) - 0.0 Power (W) 40 Single Pulse Power 0.2 - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W t1 t2 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71439 S-03662--Rev. B, 14-Apr-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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